IndiumV3, Chine, Analysis, bibRecord, 001553

Simulation of InGaN/GaN multiple quantum well light-emitting diodes with quantum dot model for electrical and optical effects

Identifieur interne : 001553 ( Chine/Analysis ); précédent : 001552; suivant : 001554

Simulation of InGaN/GaN multiple quantum well light-emitting diodes with quantum dot model for electrical and optical effects

Auteurs : RBID : Pascal:07-0253320

Descripteurs français

Pascal (Inist)
- Emission spontanée, Phénomène transport, Diode électroluminescente, Analyse donnée, Simulation numérique, Propriété optique, Puits quantique multiple, Point quantique, Composé binaire, Gallium nitrure, Semiconducteur III-V, Indium nitrure, Composé ternaire, Transport quantique, Ga N, Ga In N, GaN, InGaN/GaN, InGaN, 8560J.

English descriptors

KwdEn :
- Binary compound, Data analysis, Gallium nitride, III-V semiconductors, Indium nitride, Light emitting diode, Multiple quantum well, Numerical simulation, Optical properties, Quantum dot, Quantum transport, Spontaneous emission, Ternary compound, Transport process.

Abstract

We report a 2D simulation of electrical and optical characteristics of green color InGaN/GaN multiple quantum well light-emitting diodes by APSYS software with a dot-in-well model. The In-rich quantum dot-like structure in InGaN/GaN multiple quantum wells has been considered in the LED experimental data analysis. Simulation results based on the quantum dot model are in better agreement with the experimental data than those based on the purely quantum well model, indicating that the quantum dot spontaneous emission and the non-equilibrium quantum transport play important roles in the InGaN/GaN multiple quantum well light-emitting diodes.

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Le document en format XML

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<author><name sortKey="Xia, C S" uniqKey="Xia C">C. S. Xia</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yu Tian Road</s1>
<s2>Shanghai 200083</s2>
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<country>République populaire de Chine</country>
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<author><name sortKey="Hu, W D" uniqKey="Hu W">W. D. Hu</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yu Tian Road</s1>
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<author><name sortKey="Wang, C" uniqKey="Wang C">C. Wang</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yu Tian Road</s1>
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<author><name sortKey="Li, Z F" uniqKey="Li Z">Z. F. Li</name>
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<author><name sortKey="Chen, X S" uniqKey="Chen X">X. S. Chen</name>
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<author><name sortKey="Lu, W" uniqKey="Lu W">W. Lu</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yu Tian Road</s1>
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<author><name sortKey="Li, Z M Simon" uniqKey="Li Z">Z. M. Simon Li</name>
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<author><name sortKey="Li, Z Q" uniqKey="Li Z">Z. Q. Li</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Crosslight Software Inc., 206-3993 Henning Drive</s1>
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<title level="j" type="abbreviated">Opt. quantum electron.</title>
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<term>Data analysis</term>
<term>Gallium nitride</term>
<term>III-V semiconductors</term>
<term>Indium nitride</term>
<term>Light emitting diode</term>
<term>Multiple quantum well</term>
<term>Numerical simulation</term>
<term>Optical properties</term>
<term>Quantum dot</term>
<term>Quantum transport</term>
<term>Spontaneous emission</term>
<term>Ternary compound</term>
<term>Transport process</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Emission spontanée</term>
<term>Phénomène transport</term>
<term>Diode électroluminescente</term>
<term>Analyse donnée</term>
<term>Simulation numérique</term>
<term>Propriété optique</term>
<term>Puits quantique multiple</term>
<term>Point quantique</term>
<term>Composé binaire</term>
<term>Gallium nitrure</term>
<term>Semiconducteur III-V</term>
<term>Indium nitrure</term>
<term>Composé ternaire</term>
<term>Transport quantique</term>
<term>Ga N</term>
<term>Ga In N</term>
<term>GaN</term>
<term>InGaN/GaN</term>
<term>InGaN</term>
<term>8560J</term>
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<front><div type="abstract" xml:lang="en">We report a 2D simulation of electrical and optical characteristics of green color InGaN/GaN multiple quantum well light-emitting diodes by APSYS software with a dot-in-well model. The In-rich quantum dot-like structure in InGaN/GaN multiple quantum wells has been considered in the LED experimental data analysis. Simulation results based on the quantum dot model are in better agreement with the experimental data than those based on the purely quantum well model, indicating that the quantum dot spontaneous emission and the non-equilibrium quantum transport play important roles in the InGaN/GaN multiple quantum well light-emitting diodes.</div>
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Simulation of InGaN/GaN multiple quantum well light-emitting diodes with quantum dot model for electrical and optical effects

Simulation of InGaN/GaN multiple quantum well light-emitting diodes with quantum dot model for electrical and optical effects

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